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The noise equivalent circuit model of quantum-dot lasers

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Abstract

We derive the noise equivalent circuit model of semiconductor self-assembled quantum-dot (QD) lasers (SAQDL) from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise of an SAQDL combined with electronic components. Using the presented model, we study how the carrier dynamics influences relative intensity noise (RIN) of QD lasers. We demonstrate that RIN is degraded with larger inhomogeneous broadening. Furthermore, we show that RIN is enhanced for lower quantum-dot coverage level.

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Authors and Affiliations

  1. Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran

    Ashkan Horri & Seyedeh Zahra Mirmoeini

  2. Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran

    Rahim Faez

Authors
  1. Ashkan Horri
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  2. Seyedeh Zahra Mirmoeini
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  3. Rahim Faez
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Correspondence to Ashkan Horri.

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Horri, A., Mirmoeini, S.Z. & Faez, R. The noise equivalent circuit model of quantum-dot lasers. J Russ Laser Res 33, 217–226 (2012). https://doi.org/10.1007/s10946-012-9275-x

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  • DOI: https://doi.org/10.1007/s10946-012-9275-x

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